Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F2TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates
Publication information:
Mitrano, M., Cotugno, G., Clark, S. R., Singla, R., Kaiser, S., Stähler, J., Beyer, R., Dressel, M., Baldassarre, L., Nicoletti, D., Perucchi, A., Hasegawa, T., Okamoto, H., Jaksch, D., & Cavalleri, A. (2014). Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET-F2TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates. Physical Review Letters, 112(11), 117801.